Abstract
The energy band structure of MgO, MgSrO and MgCaO thin films has been investigated based on the Auger neutralization theory. Profiles of secondary electron emission from MgO, MgSrO and MgCaO thin films have been measured by gamma focused-ion-beam (γ-FIB) system. We have measured the energy band structure, fe(α), function in their respective valence band from the secondary electron emission characteristics by γ-FIB system with He ion beam whose energy is less than 200 eV in the surface of MgO, MgSrO and MgCaO thin films. For this work, we have employed a Fast Fourier Transform (FFT) and its Inverse-Fast Fourier Transform of the secondary electron current profile emitted from the thin films due to the Auger neutralization mechanism for the determination of the energy band structure fe(α).
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