Abstract
A new modification of the charge pumping (CP) technique based on the effect of reverse pulse bias on suppression of the geometric component is proposed in order to accurately determine the energetic and lateral distribution of interface state density (Dit) in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect transistors (FD SOI MOSFETs). A comparison of the conventional CP techniques with the proposed method is also presented. It is demonstrated that using the proposed method, the precise estimation of the energetic and lateral distribution of Dit can be simply obtained without interference from the geometry-dependent effect which often leads to the great difficulties in data interpretation in the conventional CP methods.
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