Abstract
The electro-optic properties of 1.3 µm self-assembled InAs/GaAs quantum dots grown by metal organic chemical vapour deposition are reported. The linear and quadratic electro-optic coefficients are 2.4×10−11 m/V and 3.2×10−18 m2/V2, respectively, which are significantly larger than those of GaAs bulk materials. Also, the linear electro-optic coefficient is almost comparable to that of lithium niobate.
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