Abstract
A new method for measuring the capture probability of excited electrons into quantum wells is presented. Unlike previous techniques, this method is direct, and enables the determination of capture probability as a function of injected electron energy above the well. It is based on an HBT-like structure, with a quantum well as a base. The capture probability is the ratio between base and emitter currents. Two types of bases were studied, a highly p-doped and a low n-doped. The capture by the p + well is much larger than by the n well, probably since the dominant capture mechanism is by electron–hole and electron–hole–plasmon in the former, while in the n doped well the capture is due to a polar optical phonon interaction.
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