Abstract
We quantitatively separate interface optical second harmonic generation (SHG) and electric-field induced second harmonic generation (EFISH) from hydrogenated amorphous silicon (a-Si:H) interfaces and bulk. Using a 1.51 eV probe laser, we measure SHG signals from indium tin oxide (ITO) ITO/a-Si:H/ITO sandwich structures and vary the electric fields in the a-Si:H layer using an applied voltage bias. The a-Si:H/ITO interfaces form back-to-back diodes. Because of finite optical penetration depth, SHG probes only the front diode. When the front diode is reverse biased, the EFISH contribution dominates the SHG signal and probes the electric field in the ∼30 nm adjacent to the interface. Through fitting of the SHG data, we find that in this near-interface region, the electric field is proportional to the square root of the applied bias. The fitting measures the interfacial ITO/a-Si:H built-in voltage to be ∼0.2 V.
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