Abstract
AbstractThe level of arsenic from the effluent of a crystal grower was measured at different phases of the silicon crystal growth operation which includes arsenic doping, crystal body growth, burn‐in, and post burn‐in periods. Measurement of arsenic levels were made in the discharge water used as the sealing liquid for the liquid ring vacuum pump used for process effluent discharge. Gas phase measurements were also performed for both particulate arsenic as As2O3 as well as for compounds of arsenic in vapor phase as AsH3. Results of these analyses provided important information for developing strategy for emission treatment and control, reducing arsenic exposure to personnel and evaluating the feasibility for recycling argon used in the crystal growing process.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
