Measurement and modeling of MOSFET's 1/f noise with BSIM3 version 3.2 for an analog circuit design

Abstract

AbstractIt has traditionally been known that one of the major noise factors which become an issue in analog circuits in audio frequency band and oscillator circuits in various frequency bands is the 1/f noise from semiconductor devices constituting the circuits. While the measurement and modeling of 1/f noise from semiconductor devices is very important for the design of these analog circuits, the difficulty in its measurement and characterization has been a problem. Also, with the recent progress of noise reduction techniques in MOS transistors, circuit configuration with MOS transistors has become possible in the analog circuits mentioned above. Therefore, in this paper the stable and accurate measurement of 1/f noise in MOS transistors and its modeling technique using BSIM3 Version 3.2, which is the most recent SPICE model for MOS transistors, are described. © 2002 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 85(4): 30–36, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.1102