Abstract
Short-channel NMOSFET degradation is explored by measuring the effect of hot-carrier stress on the substrate and drain currents, with normal and reverse polarities applied. The degradation mechanism can be explained as being, under most conditions, the trapping of electrons in the gate oxide near the stressed drain. This mechanism can explain results which have previously been attributed to trapped holes in the oxide. Two-dimensional simulation of the device characteristics, with the degradation modeled as localized electrons in the oxide, supports this conclusion.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
