Abstract
The formation of undislocated three-dimensional (3D) islands during semiconductor heteroepitaxy is studied using self-consistent rate equations. Lattice misfit strain is presumed to influence the rate at which atoms detach from two-dimensional (2D) islands and the rate at which 2D islands transform to 3D islands. The calculated dependence of the 3D island densities on growth rate and coverage compares favorably with experimental results for InP grown on GaP-stabilized GaAs(001) by metal-organic vapor phase epitaxy.
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