Abstract
The market for magnetic sensors has been growing rapidly. In 1995, Asahi Kasei Electronics (AKE) commercially produced over 800 million InSb high-sensitivity Hall sensors (which amounts to 70%, of the world market) by vacuum deposition. InAs Hall sensors having good noise properties and small temperature dependence have also been developed by mass production molecular beam epitaxy (MBE). Further, InAs deep quantum well (InAs DQW) Hall sensors with high sensitivity and good stability under a wide temperature range are opening up new applications of magnetic sensors. Hall sensors have now become an important application for III-V compound semiconductors.
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