Abstract
The MBE growth of InGaAs layers on Si-implanted InP : Fe substrates was investigated. Ion doses and energies used were in the range of 5x10 12–5x10 14 cm −2 and 100–700 keV, respectively. Among the different annealing conditions tested, i.e. in-situ annealing in the MBE growth chamber at 500°C, rapid thermal annealing at 650°C, and high temperature annealing at 750°C under PH 3/H 2 partial pressure, only the latter method was found to ensure restoration of the substrate crystal and high-quality overgrowth as assessed by RHEED and X-ray diffractometry. Heterojunction bipolar transistors employing an implanted overgrown collector were successfully fabricated.
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