Abstract
The growth of AlxIn1−xAs self-assembled quantum dots (QDs) is studied on a stripe mesa of GaAs by molecular beam epitaxy. The stripe is along the [1 −1 0] direction on a (0 0 1) GaAs substrate and formed with {1 1 1}A and {1 1 4}A facets on the side, and {1 1 5}A facets on the top. The {1 1 5}A facets give a shallow V-groove on the top of the mesa. The dots are grown selectively at the bottom of the V-groove via an AlGaAs interlayer to form one-dimensionally aligned AlInAs QDs. We find that the diameter of an individual dot is elongated along the stripe direction, and the size as well as the density is varied by the sharpness of the V-groove structure. The manner of the QD formation is investigated as a function of the growth temperature and the Al composition x.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
