Abstract
We present the optimum growth conditions of lattice-matched ZnSxSe1-x (x ≈ 0.055) by MBE on (100) GaAs substrates. Surface morphology, X-ray diffraction and photoluminescence were investigated, and the optimum growth conditions were revealed as follows: The molecular beam intensity ratio of the group VI to II element is around 2.0 and the substrate temperature is 340 °C. This molecular beam ratio means that the surface coverage fractions of the group II and group VI atoms are the same during growth. It is shown by comparing the photolumunescence spectra that the quality of the ZnSxSe1-x epilayers was higher than that of ZnSe.
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