Abstract
GaAs LEDs were fabricated on (111)A GaAs substrates using a p-n structure grown with controlled all-Si doping. Cathodoluminescence spectra and I–V characteristics for these samples confirmed p-n structures. The peak intensity of the sample's emission spectrum was equivalent to that of the sample grown using Be as the p-type dopant. As the forward current was increased, the intensity increased without a peak shift, which was observed in the Be-doped sample. A SIMS study of Si or Be diffusion in the p-type layer using a delta-doped GaAs layer suggests that the peak shift is caused by Be diffusion.
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