Abstract
AlGaAsGaAs pin (p-Al0.3Ga0.7As/i-GaAs/n-Al0.3Ga0.7As) structures have been grown on GaAs(111)A substrates using only Si dopant. These pin structures have been confirmed by observing cathodoluminescence (CL) spectra, I–V characteristics and secondary ion mass spectroscopy (SIMS) profiles of the samples. Emission spectra of the samples provide a peak wavelength of 875 nm at 300 K; this peak is attributed to the emission in the i-GaAs layer. The profiles of these emission spectra become narrow at a low temperature of 14 K. Furthermore, the peak intensity increases drastically without a peak shift as the forward current is increased to 80 mA. This study shows that AlGaAsGaAs double heterostructure light emitting diodes (LEDs) can be grown on GaAs(111)A using only Si dopant.
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