Abstract
A novel method for fabrication of the quantum wire structures has been investigated by which a quantum wire has been successfully fabricated on top of a (111)B facet structure with a very sharp ridge. Electron microscope study has shown that GaAs wires with the effective lateral width of 16–18 nm and with the thickness of 6–9 nm are formed at the ridge top. Photoluminescence and cathodoluminescence measurements indicate that ID quantum confinement of electrons is realized at the ridge top and its blue shift agrees with the quantum confined energy calculated for the observed wire structure.
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