Abstract
InAs quantum wells (QWs) with AlAsSb and CdMgSe asymmetric barriers have been fabricated by a two-step molecular beam epitaxy on InAs(100) substrates. A 5-monolayer-thick ZnTe layer has been introduced between the InAs and CdMgSe layers as a buffer of the II–VI growth initiation. Ex-situ S-passivation technique applied to the uncapped InAs surface provides formation of defect free III–V/II–VI heterovalent interface. Photoluminescence study proves a strong type I band line-up at the ZnTe-mediated InAs/CdMgSe interface with the conduction and valence band offsets of about 0.6 eV and 1.0 eV, respectively. Transport properties of two-dimensional electron gas confined in a 16-nm-thick AlAsSb/InAs/ZnTe/CdMgSe QWs grown on GaAs (100) are compared with those of pure III–V 2DEG structures. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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