Abstract
N-type gallium oxide (Ga2O3) homoepitaxial thick films were grown on β-Ga2O3 (010) substrates by molecular beam epitaxy. The epitaxial growth rate was increased by more than 10 times by changing from the (100) plane to the (010) plane. The carrier concentration of the epitaxial layers could be varied within the range of 1016–1019cm−3 by changing the Sn doping concentration. Schottky barrier diodes (SBDs) and metal–semiconductor field-effect transistors (MESFETs) on β-Ga2O3 homoepitaxial layers were demonstrated for the first time. The SBDs exhibited good device characteristics such as an ideality factor of 1.13, and high breakdown voltage about 125V. The MESFETs also exhibited excellent characteristics such as a perfect pinch-off of the drain current, off-state breakdown voltage over 250V, high on/off drain current ratio of around 104, and small gate leakage current. These device characteristics clearly indicate the great potential of Ga2O3 as a high-power device material.
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