Abstract
We have quantitatively evaluated the usable thickness of specimens in scanning transmission electron microscopy (STEM) at 1 MV using a wedge-shaped Si(110) single crystal including artificially introduced high-density dislocations. The width of dislocation images was employed as a criterion for the quantitative evaluation of usable thickness. Superior usable thickness in STEM than in TEM was found; the obtained results were 14.7 µm for STEM and 5.8 µm for TEM. In particular, in STEM, dislocations can be observed as thin lines with 10–15 nm width in the thickness range up to 10 µm. The latest high-voltage STEM is useful for imaging crystal defects in thick semiconductors.
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