Abstract

The maximum operating junction temperatures of punch-through (PT) and non-punch-through (NPT) insulated gate bipolar transistors (IGBTs) at high frequency are investigated experimentally. The maximum junction temperature of the PT IGBT varies with circuit conditions and is in the range 115–170°C. The NPT IGBT can typically operate at junction temperatures up to 230°C in various circuits.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.