Abstract
Abstract The dependence of the secondary ion yield of Ge and Si atoms in Si1-xGex layers, where x varies from 0.005 to 0.75, has been measured for incident sputtering beams of O+2 and Cs+ of varying energy. For the O+2 beam, the positive ion yield per atom was constant for Ge concentrations 5%, whereas the negative ion yield decreased significantly.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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