Abstract
The galvanostatic double pulse (g.d.p.) method is applied to a consecutive charge transfer mechanism involving adsorption of an intermediate in order to determine various kinetic parameters as well as the double layer capacity and the adsorption pseudo-capacity. A mathematical treatment is carried out for a corresponding equivalent circuit. The elements of this circuit are assumed to be independent of time, potential and other parameters. The conditions for the application of the g.d.p method as well as the relationships for the determination of the elements are given. A numerical analysis illustrates the influence of experimental parameters on the results. The application of the g.d.p. method on the system Cu/Cu 2+ is discussed.
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