Abstract
The issue of constructing a mathematical model of contact to a porous layer of gallium arsenide is considered. It is shown that thermionic emission is the main mechanism that determines the current flow in the metal contact - porous gallium arsenide system. An expression is obtained that determines the relationship between the contact resistance and the porosity of a gallium arsenide film. A mathematical model has been developed that describes the dependence of the total resistance of the metal contact-porous layer of gallium arsenidegallium arsenide substrate on the porosity of the film, and it is shown that with an increase in the thickness of the porous film, the total resistance increases. To assess the adequacy of the developed mathematical model of the metal-porous gallium arsenide contact with the Schottky barrier, current-voltage characteristics were constructed and the total contact resistance was calculated for experimental samples with different porous layer thicknesses. The discrepancy between the simulation results and experimental data does not exceed 20%.
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