Abstract
A mathematical model, in which mass fluxes are expressed according to the “dusty gas” model, is proposed to described densification of a ceramic perform by chemical vapor infiltration (CVI) Local temperatures previously computed for a perform subjected to microwaves are input to the mass transport model. The model is solved numerically for deposition of SiC from trichloromethylsilane in a porous SiC perform. The computed results clearly demonstrate an advantage in employing, microwaves heating in CVI, Also, greater infilatration is achieved in a perform of greater pore size and at lower temperature. However for successful infiltration, diffusion/chemical‐reaction‐controlled CVI is shown to impose limits on the preform size.
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