Materials selection for oxide-based resistive random access memories

Abstract

The energies of atomic processes in resistive random access memories (RRAMs) are calculated for four typical oxides, HfO2, TiO2, Ta2O5, and Al2O3, to define a materials selection process. O vacancies have the lowest defect formation energy in the O-poor limit and dominate the processes. A band diagram defines the operating Fermi energy and O chemical potential range. It is shown how the scavenger metal can be used to vary the O vacancy formation energy, via controlling the O chemical potential, and the mean Fermi energy. The high endurance of Ta2O5 RRAM is related to its more stable amorphous phase and the adaptive lattice rearrangements of its O vacancy.