Abstract
Based on assumptions of micro-contact over wafer-abrasive and pad-abrasive interfaces, the Gaussian distribution of abrasive size and an assumed normal distribution of pad surface, a novel model for material removal in chemical mechanical polishing is developed. The chemical effect is taken into account by parameter Hw (the hardness of the chemically modified surface layer on wafer). The model proposed integrates process parameter, wafer harness, pad topography, pad properties and abrasive distribution into the model to predict the material removal rate (MRR). Based on the deformation of hyper-elastic asperities attached to a liner-elastic pad, asperity scale MRR is introduced. Active particles is calculated by probability theory and the wafer scale MRR is proposed. Compared with the experimental results, the model accurately predicts MRR.
Published Version
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