Abstract
This paper presents the design, simulation, and investigation of a fundamental structure for capacitive MEMS switches in a shunt configuration. The main objective is to select materials that achieve low actuation voltage while maintaining RF and dynamic performance, especially for mm-wave applications. The proposed design consists of a Fixed-Fixed flexure beam with dimensions of 260 μm in length, 100 μm in width, and 0.5 μm in thickness. Considering the impact of squeeze film, 60 holes are integrated into the beam membrane, each measuring 64 μm² (8µm x 8µm), and a final gap of 1.9 μm is implemented. The suitability of materials for the beam membrane and dielectric layer in capacitive MEMS switches has been thoroughly examined through a combination of theoretical analysis and software simulations. Aluminum (Al) has emerged as the ideal choice for the beam membrane in mm-wave applications. This preference is defensible by its simulated results to offer a low pull-in voltage of 4V, a quality factor of 1.18, and a switching time of 67 microseconds. Similarly, Si3N4 has been identified as appropriate material, offering a upstate capacitance of 91fF and a downstate capacitance of 7.1pF.
Published Version
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