Abstract
We summarize the room-temperature minority-carrier mobility, minority-carrier lifetime, and effective band-gap shrinkage for p-type GaAs at large dopings, as determined from measurements on heterostructure bipolar transistors and published literature. The minority-carrier mobilities are significantly smaller than the majority-carrier mobilities, the lifetime data show a change in dependence on doping at 1×1019 cm−3, and the effective band-gap shrinkage is ≊5% at 1×1019 cm−3. The fits to electrical parameters described here should be of interest in modeling of minority-carrier devices.
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