Abstract
Abstract Abstract. The technology development for nano structure formation using standard CMOS process-basedmethod capable of fabricating precisely control nano wire and Nanogap formation were demonstrated.The fabrication of nanoscale patterns with dimensions of 50 nm or less has been the goal of manyresearchers for potential applications as various sensing element, using improved Photolithographycoupled with plasma oxidation and by simultaneous application of reactive ion etcher and oxidationfurnace, step wise patterning and oxidation was introduced for size expansion and trimming nanogap andNanowire fabrication from micro sizes down to nano sizes <30nm. To demonstrate the quality of thefabricated nanogap, the fabricated structure is optically and electrically characterized with a fieldemission scanning electron microscope (FESEM) and dielectric analyzer (DA). To characterized thefabricated nanogap, an electrical characterization of the structures by dielectric analyzer (DA) shows anenhanced permittivity and capacity with the reduction of gap size, and Nano wire of lowest dimension of1.5 nm was obtained with improved conductivity, suggesting the potential of the fabricated devices forapplications in sensitive and selective detection of biomolecules with very low level of power supply.© 2012 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of Bina Nusantara University.Keywords:
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