Abstract
The simultaneous development of suitable characterization techniques that provide fast feedback to the growth as well as basic material understanding have enabled the fast development of epitaxial and bulk growth of SiC. The characterization techniques can roughly be divided into two different categories, routine characterization that are made on most grown material and specialized characterization that are performed in order to study and understand specific material properties. The routine measurements described in this paper are all based on optical and non-destructive techniques. The main effort in this field is currently to study and understand the role of structural defects, often replicated from the substrate into the epilayer.
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