Abstract

This paper reviews recent our studies of CMOS channels based on the concept of subband structure engineering. This device design concept can be applied to strained-Si channel MOSFETs, ultra-thin SOI MOSFETs and Ge-on-insulator (GOI) MOSFETs. As for the electron mobility enhancement, an important factor is the introduction of larger subband energy splitting between the 2-fold and the 4-fold valleys on a (100) surface, which can be obtained in strained-Si and ultra-thin body (UTB) channels based in S. Takagi et al. (1997).

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