Abstract
Contribution of photon recycling (PR) effects to solar cell properties has been theoretically studied with a conventional n +-p structure of InP. The study is focused on the effects of structural and material parameters on the magnitude of PR effects. For the sample structure employed in this study, PR effects are found as an increase in photocurrent. The magnitude of PR decreases with decreasing n +-emitter thickness and disappears at a thickness ⪅0.1 μm. The PR effect is also decreased as doping level of the n +-emitter decreases. High surface recombination velocity for the n +-emitter is found to reduce the PR effect. The contribution of the p-base layer to the PR is scarcely observed in the present structure.
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