Abstract
Abstract In modern computer memory role is to sense the low power signals, this paper optimally finds the best solutions to improve the performance of the Sense Amplifier for CMOS SRAM. The circuit is designed and simulated in the Advanced Design System. The simulation result shows that the required output voltage 1.2 V is available after addition of an Inverter at the output & having identical PMOS & NMOS in the circuit. It is observed that the performance of the sense amplifier has been improved drastically. To have better results now our future work will concern the 22-nm technology.
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