Abstract
Copper indium gallium selenium (CIGS) films are attractive for photovoltaic applications due to their high optical absorption coefficient. The generation of CIGS films by electrodeposition is particularly appealing due to the relatively low capital cost and high throughput. Numerous publications address the electrodeposition of CIGS; however, very few recognize the critical significance of transport in affecting the composition and properties of the compound. This study introduces a new electrolyte composition, which is far more dilute than systems that had been previously described, which yields much improved CIGS films. The electrodeposition experiments were carried out on a rotating disk electrode, which provides quantitative control of the transport rates. Experiments with the conventional electrolyte, ten times more concentrated than the new electrolyte proposed here, yielded powdery and non-adherent deposit. By contrast, the new, low concentration electrolyte produced in the preferred potential interval of −0.64 ≤ E ≤ −0.76 V vs. NHE, a smooth and adherent uniform deposit with the desired composition across a broad range of rotation speeds. The effects of mass transport on the deposit are discussed. Sample polarization curves at different electrode rotation rates, obtained in deposition experiments from the high and the low concentration electrolytes, are critically compared. Characterization of the overall efficiency, quantum efficiency, open circuit voltage, short circuit current, dark current, band gap, and the fill factor are reported.
Highlights
IntroductionCuInx Ga(1−x) Se2 (CIGS) is a highly effective absorber layer for photovoltaic (PV) devices
CuInx Ga(1−x) Se2 (CIGS) thin film should be in the order of 1.5 to 2.5 μm; this film is attractive for photovoltaic applications because of its high optical absorption coefficient [1], about 105 cm−1
The dilute electrolyte produced a smooth deposit with no evidence of powder formation on either the substrate or within the electrolyte, across a broad rotation range up to 600 rpm
Summary
CIGS is a highly effective absorber layer for photovoltaic (PV) devices. The value designated by “x” in the formula can range from zero to one and affects mostly the CIGS structure and its band gap energy [1]. CIGS thin film should be in the order of 1.5 to 2.5 μm; this film is attractive for photovoltaic applications because of its high optical absorption coefficient [1], about 105 cm−1. The PV cells with CIGS as an absorption layer have an efficiency approaching 20% as has been demonstrated in laboratory tests [2]. Vacuum deposition techniques provided the best method to obtain the best CIGS absorber layer and the most efficient CIGS devices between other fabrication methods [3,4,5]. Germany’s Center for Solar Energy claims to have the record efficiency of
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