Abstract
The principles of mass spectrometry are discussed and applied to the problem of assuring the purity of ion beam species in ion implantation. Experimental confirmation of various ion dissociation and charge exchange phenomena is presented for the case of a SiF4 plasma used to produce Si ions for doping GaAs. Techniques for recognizing spurious ion species are explained.
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More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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