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https://doi.org/10.1364/cleo_qels.2016.ftu3d.3
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Cite Publication Date: Jan 1, 2016 |
Here, we demonstrate direct, maskless creation of single silicon-vacancy centers in diamond nanostructures via focused ion beam implantation with < 50 nm positioning precision and close to lifetime-limited emission linewidth of ∼ 126±13 MHz.
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