Abstract
We describe how general lattice images may be used to measure the variation of the potential in crystalline solids in any projection, with no knowledge of the imaging conditions. This approach is applicable to structurally perfect samples, in which interfacial topography or changes in composition are of interest. We present the first atomic-level topographic map of a Si/${\mathrm{SiO}}_{2}$ interface in plan view, and the first microscopic compositional map of a Si/GeSi/Si quantum well in cross section.
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