Abstract
High resolution transmission electron microscope and geometric phase analysis are used to study strain distribution across the cross-section of GaAs/AlAs multilayer superlattices. This work aims to reveal the strain distribution and its anisotropy, which is helpful for the estimation of anisotropic properties and failure of GaAs/AlAs multilayer superlattices-based devices. The GaAs/AlAs multilayer SLs has a clear six layers structure and all layers are determined to the zinc-blende structure. The farther the interface from the substrate, the larger the strain. The anisotropy of strain distributions along 11-1, 02-2 and 1-1-1 directions is obvious. For 02-2 direction, positive strains on the right side of AlAs film in the farthest region was pretty large with a maximum strain of 6.48%. The interface with a large strain has a great possibility of cracking or failure.
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