Abstract
In this study, strain measurement can be analyzed in sub-10nm SiGe layer (~7 nm) grown on [100] Si substrate by chemical vapor deposition at the nanoscale level. The measurement technique is based on transmission electron microscopy (TEM), in which high-resolution transmission electron microscopy (HRTEM) image is combined with the image processing of geometric phase analysis (GPA) software. In this case, GPA analyzes the HRTEM images formed at the [011] zone axis to obtain information about strain maps along the [100] growth direction of the nanoscale SiGe region. The strain analyzed in the SiGe layer is within 1.6-2.9% with high precision and high spatial resolution.
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