Abstract
A real-space mapping of photovoltage near the edge of the Hall-bar of a GaAs/AlGaAs single heterojunction has been obtained using a dilution-refrigerator-based near-field scanning optical microscope in magnetic fields. The optical probe-sample surface distance dependence of photovoltage is investigated. We obtain photovoltage profile in the vicinity of the edge, which reflects the local chemical potential of the two-dimensional electron gas determined by the distribution of the compressible and incompressible strips.
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