Abstract
Compressible and incompressible strips formed near the boundary of a two‐dimensional electron system were mapped out by near‐field scanning optical microscope at 230 mK. Dilution‐refrigerator based near‐field scanning optical microscope enables us to investigate spatial properties of the electrons in semiconductor nanostructures with a subwavelength spatial resolution. We obtain real‐space mapping of photovoltage in the vicinity of the edge of Hall‐bar, which reflects the local chemical potential determined by the distribution of the compressible and incompressible strips.
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