Abstract
AbstractThe study of semiconducting nanowires is one of the most rapidly growing research areas in materials science and nanotechnology, not only from the point of view of the possible applications, but also regarding the use of the latest developments in the theory. In this paper, we review the general ab initio many‐body theory and methods and resume some of our very recent results regarding the structural, electronic, and optical properties of Silicon nanowires (Si‐NWs), outlining both the reached achievements and some of the technical aspects necessary to obtain them.
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