Abstract
Evolution of the Ti/a-Ge/Si trilayer reactions has been investigated using transmission electron microscopy and Auger electron spectroscopy. Instead of amorphous phase formation, as usually observed in the Ti/Si bilayer reaction, the crystalline Ti6Ge5 is the first phase observed during the reaction. Preceding the equilibrium C54-Ti(Si,Ge)2, a substitutional solid solution type C49-Ti(Si,Ge)2 forms upon annealing at 550–600 °C, regardless of the replacement of amorphous phase by the crystalline phase. The C49-to-C54 polymorphic transformation occurs at ∼650 °C. The reaction path is also correlated with the change in film resistance obtained from a four-point sheet resistance measurement.
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