Abstract
The authors have discovered that high doping densities in an alloy graded InGaAs buffer have dramatic effects on strain relaxation dynamics and consequently surface and optical qualities in metamorphic heterostructures. Compared with undoped graded buffers, the use of Be doping significantly improves structural, surface, and optical qualities while the use of Si doping deteriorates all these properties. This discovery is significant for the realization of metamorphic optoelectronic devices.
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