Abstract
A matrix of Si crystals can be formed on amorphous substrates by manipulating nucleation sites. We have investigated various SiNx by x-ray photon spectroscopy in order to search for suitable artificial nucleation sites and measured the density of Si nuclei deposited on the SiNx. It is found that the Si/N compositional ratio of the Si+ ion implanted SiNx surface is much higher than the theoretically estimated value. Si nucleus density on these surfaces increases with the Si/N compositional ratio. Si crystals were well manipulated on the portions of the Si-enriched SiNx dotted over SiO2 due to improved selectivity.
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