Abstract
Linear and nonlinear optical properties of GaSb quantum ring inside AlxGa1−xAs/GaAs/AlxGa1−xAs quantum well (QW) and AlAs/GaAs/InGaAs/AlAs double QW have been theoretically investigated. The effects of the Al concentration in the barrier, the widths of the layers, the position of the quantum ring inside the wells and the incident optical intensity on linear and nonlinear absorption and refractive index, associated to the ground excitonic state, have been explored. We found that by varying the different parameters of the studied structures and the incident optical intensity, one can manipulate the linear and nonlinear absorption coefficient and refractive index. These results make the studied systems a promising candidate for application in tunable nano-optoelectronic devices.
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