Abstract
We present a theoretical study of linear and nonlinear optical properties of carriers in types I and II GaAs /AlxGa1−xAs quantum rings (QRs). We are interested in the effects of incident optical intensity, Al concentration in the barrier and rim height (hM) on linear and nonlinear absorption and refractive index, for both types of QR. After a detailed analysis of the results and a comparison between the optical properties of type I and II QRs, we conclude that we can act on the linear and non-linear absorption coefficient and the refractive index by affecting the parameters of these nanostructures. Thus, GaAs /AlxGa1−xAs quantum rings are appropriate for tunable nano-optoelectronic devices.
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