Abstract
Singlet fission (SF) in organic semiconductors, i.e. spontaneous splitting of the excited singlet (S1) state into triplet (T) exciton pair, is known to be strongly influenced by back annihilation of TT-pair. We show that this influence is properly described only by taking into account diffusive exciton migration (EM). Within the model of two states (states of interacting TT-pairs and migrating excitons) the SF is studied by analyzing the kinetics IS1(t) of decay of fluorescence from S1-state. Analysis shows that the EM strongly manifests itself in the kinetics resulting, in particular, in long-time dependence IS1(t)∼t-3/2. The model accurately describes IS1(t), recently observed for a number of semiconductors.
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