Abstract
By utilizing and designing coupled InGaN QW-QDs nanostructures as active layer, we show a demonstration of significant enhancement of green emission in the hybrid nanostructure with a 4.5 nm GaN barrier layer at high temperatures. Such enhancement is ascribed to temperature dependent phonon-assisted tunneling of excitons from QW to QDs and suppression of non-radiative recombination of excitons localized in the QDs layer in the sample with a 4.5 nm barrier layer. This study shall be useful for optimization design of high-efficiency InGaN-based green LEDs, and also could shed some light on the complicated internal luminescence mechanisms in InGaN QW-QDs hybrid nanostructures.
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