Abstract
Through the simulation, a concept for the next generation MOSFET or IGBT as a single chip solution by combining Super Junction MOSFET (SJ-MOSFET) with Reverse Conducting IGBT (RC-IGBT) is presented. Since the MOSFET's fundamental trade-off relationship between Ron,sp and turn-off loss Eoff is much better than IGBT's, we focus how to push up a connection collector current density Jconnect where SJ MOSFET's output I-V curve touches the IGBT's one and found out the good combination for an N-drift and an N-buffer. This proposed device has an enough Unclamped Inductive Switching (UIS) capability as the SJ-MOSFET's SOA and acceptable dynamic characteristics as the IGBT or the FWD.
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